IPL65R210CFDAUMA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 16.6A 4VSON

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Obsolete

Infineon Technologies

MOSFET N-CH 650V 16.6A 4VSON

Technical Specifications

Parameters and characteristics for this part

Specification	IPL65R210CFDAUMA1

Current - Continuous Drain (Id) @ 25°C	16.6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	1850 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	4-PowerTSFN
Power Dissipation (Max) [Max]	151 W
Rds On (Max) @ Id, Vgs	210 mOhm
Supplier Device Package	PG-VSON-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]
Infineon Technologies IPL65R210CFDAUMA2	N-Channel	210 mOhm	Surface Mount	68 nC	4-PowerTSFN	650 V	1850 pF	PG-VSON-4	20 V	4.5 V	MOSFET (Metal Oxide)	10 V	150 °C	-40 °C	16.6 A	151 W
Infineon Technologies IPL65R210CFDAUMA1	N-Channel	210 mOhm	Surface Mount	68 nC	4-PowerTSFN	650 V	1850 pF	PG-VSON-4	20 V	4.5 V	MOSFET (Metal Oxide)	10 V	150 °C	-40 °C	16.6 A	151 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 16.6A (Tc) 151W (Tc) Surface Mount PG-VSON-4

Technical documentation and resources

No documents available