IPL65R210 Series

Catalog

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; THINPAK 8X8 PACKAGE; 210 MOHM; FAST RECOVERY DIODE

Part	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]
Infineon Technologies IPL65R210CFDAUMA2	N-Channel	210 mOhm	Surface Mount	68 nC	4-PowerTSFN	650 V	1850 pF	PG-VSON-4	20 V	4.5 V	MOSFET (Metal Oxide)	10 V	150 °C	-40 °C	16.6 A	151 W
Infineon Technologies IPL65R210CFDAUMA1	N-Channel	210 mOhm	Surface Mount	68 nC	4-PowerTSFN	650 V	1850 pF	PG-VSON-4	20 V	4.5 V	MOSFET (Metal Oxide)	10 V	150 °C	-40 °C	16.6 A	151 W