Specification	MURTA200120R

Current - Average Rectified (Io) (per Diode)	100 A
Current - Reverse Leakage	25 µA
Diode Configuration	Common Anode
Diode Pair Count	1 pair
Mounting Type	Chassis Mount
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	Three Tower
Package Name	Three Tower
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	1200 V
Voltage - Forward (Vf) (Max)	2.6 V

MURTA200 Series

Part	Mounting Type	Voltage - Forward (Vf) (Max)	Diode Pair Count	Diode Configuration	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Technology	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Voltage - DC Reverse (Vr) (Max)	Package / Case	Current - Reverse Leakage	Package Name	Current - Average Rectified (Io) (per Diode)
GeneSiC Semiconductor MURTA20020	Chassis Mount	1.3 V	1 pair	Common Cathode	150 °C	-55 °C	Standard	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	200 V	Three Tower	25 µA	Three Tower	100 A
GeneSiC Semiconductor MURTA20020	Chassis Mount	1.3 V	1 pair	Common Cathode	150 °C	-55 °C	Standard	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	200 V	Three Tower	25 µA	Three Tower	100 A
GeneSiC Semiconductor MURTA20020R	Chassis Mount	1.3 V	1 pair	Common Anode	150 °C	-55 °C	Standard	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	200 V	Three Tower	25 µA	Three Tower	100 A
GeneSiC Semiconductor MURTA20060R	Chassis Mount	1.7 V 1.7 V	1 pair	Common Anode	150 °C	-55 °C	Standard	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	600 V	Three Tower	25 µA	Three Tower	100 A
GeneSiC Semiconductor MURTA20040	Chassis Mount	1.3 V	1 pair	Common Cathode	150 °C	-55 °C	Standard	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	400 V	Three Tower	25 µA	Three Tower	100 A
GeneSiC Semiconductor MURTA200120R	Chassis Mount	2.6 V	1 pair	Common Anode	150 °C	-55 °C	Standard	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1200 V	Three Tower	25 µA	Three Tower	100 A
GeneSiC Semiconductor MURTA20040R	Chassis Mount	1.3 V	1 pair	Common Anode	150 °C	-55 °C	Standard	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	400 V	Three Tower	25 µA	Three Tower	100 A
GeneSiC Semiconductor MURTA20040	Chassis Mount	1.3 V	1 pair	Common Cathode	150 °C	-55 °C	Standard	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	400 V	Three Tower	25 µA	Three Tower	100 A
GeneSiC Semiconductor MURTA200120	Chassis Mount	2.6 V	1 pair	Common Cathode	150 °C	-55 °C	Standard	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1200 V	Three Tower	25 µA	Three Tower	100 A
GeneSiC Semiconductor MURTA20040R	Chassis Mount	1.3 V	1 pair	Common Anode	150 °C	-55 °C	Standard	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	400 V	Three Tower	25 µA	Three Tower	100 A

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MURTA200120R | Datasheet