MURTA200 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 200V 100A 3TOWER
| Part | Mounting Type | Voltage - Forward (Vf) (Max) | Diode Pair Count | Diode Configuration | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Technology | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Voltage - DC Reverse (Vr) (Max) | Package / Case | Current - Reverse Leakage | Package Name | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Chassis Mount | 1.3 V | 1 pair | Common Cathode | 150 °C | -55 °C | Standard | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 200 V | Three Tower | 25 µA | Three Tower | 100 A |
GeneSiC Semiconductor | Chassis Mount | 1.3 V | 1 pair | Common Cathode | 150 °C | -55 °C | Standard | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 200 V | Three Tower | 25 µA | Three Tower | 100 A |
GeneSiC Semiconductor | Chassis Mount | 1.3 V | 1 pair | Common Anode | 150 °C | -55 °C | Standard | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 200 V | Three Tower | 25 µA | Three Tower | 100 A |
GeneSiC Semiconductor | Chassis Mount | 1.7 V 1.7 V | 1 pair | Common Anode | 150 °C | -55 °C | Standard | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 600 V | Three Tower | 25 µA | Three Tower | 100 A |
GeneSiC Semiconductor | Chassis Mount | 1.3 V | 1 pair | Common Cathode | 150 °C | -55 °C | Standard | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 400 V | Three Tower | 25 µA | Three Tower | 100 A |
GeneSiC Semiconductor | Chassis Mount | 2.6 V | 1 pair | Common Anode | 150 °C | -55 °C | Standard | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 1200 V | Three Tower | 25 µA | Three Tower | 100 A |
GeneSiC Semiconductor | Chassis Mount | 1.3 V | 1 pair | Common Anode | 150 °C | -55 °C | Standard | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 400 V | Three Tower | 25 µA | Three Tower | 100 A |
GeneSiC Semiconductor | Chassis Mount | 1.3 V | 1 pair | Common Cathode | 150 °C | -55 °C | Standard | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 400 V | Three Tower | 25 µA | Three Tower | 100 A |
GeneSiC Semiconductor | Chassis Mount | 2.6 V | 1 pair | Common Cathode | 150 °C | -55 °C | Standard | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 1200 V | Three Tower | 25 µA | Three Tower | 100 A |
GeneSiC Semiconductor | Chassis Mount | 1.3 V | 1 pair | Common Anode | 150 °C | -55 °C | Standard | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 400 V | Three Tower | 25 µA | Three Tower | 100 A |