TSM4ND60CI C0G

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 600V 4A ITO220

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 600V 4A ITO220

Technical Specifications

Parameters and characteristics for this part

Specification	TSM4ND60CI C0G

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17.2 nC
Input Capacitance (Ciss) (Max) @ Vds	582 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max) [Max]	41.6 W
Rds On (Max) @ Id, Vgs	2.2 Ohm
Supplier Device Package	ITO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.8 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
Taiwan Semiconductor Corporation TSM4ND60CI C0G	2.2 Ohm	4 A	MOSFET (Metal Oxide)	-55 °C	150 °C	Through Hole	N-Channel	600 V	TO-220-3 Full Pack Isolated Tab	30 V	17.2 nC	10 V	ITO-220	41.6 W	582 pF	3.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 4A (Tc) 41.6W (Tc) Through Hole ITO-220

Technical documentation and resources

No documents available