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MOSFET N-CH 600V 4A ITO220
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Type | Drain to Source Voltage (Vdss) | Package / Case | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 2.2 Ohm | 4 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | Through Hole | N-Channel | 600 V | TO-220-3 Full Pack Isolated Tab | 30 V | 17.2 nC | 10 V | ITO-220 | 41.6 W | 582 pF | 3.8 V |