CMS01P10T-HF

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Comchip Technology

MOSFET P-CH 100V 1.2A SOT23-3

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Comchip Technology

MOSFET P-CH 100V 1.2A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	CMS01P10T-HF

Current - Continuous Drain (Id) @ 25°C	1.2 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC
Input Capacitance (Ciss) (Max) @ Vds	513 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	650 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

MOSFET P-CH 100V 1.2A SOT23-3

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Comchip Technology CMS01P10T-HF	100 V	1 W	SOT-23-3	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	2.5 V	P-Channel	9.3 nC	4.5 V, 10 V	650 mOhm	SC-59, SOT-23-3, TO-236-3	20 V	513 pF	1.2 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 100 V 1.2A (Ta) 1W (Ta) Surface Mount SOT-23-3

Technical documentation and resources

No documents available