MOSFET P-CH 100V 1.2A SOT23-3
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Supplier Device Package | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Vgs(th) (Max) @ Id | FET Type | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Package / Case | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Comchip Technology CMS01P10T-HF | 100 V | 1 W | SOT-23-3 | MOSFET (Metal Oxide) | -55 °C | 150 °C | Surface Mount | 2.5 V | P-Channel | 9.3 nC | 4.5 V, 10 V | 650 mOhm | SC-59, SOT-23-3, TO-236-3 | 20 V | 513 pF | 1.2 A |