IXFH26N50

IXYS

MOSFET N-CH 500V 26A TO247AD

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IXYS

MOSFET N-CH 500V 26A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH26N50

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Input Capacitance (Ciss) (Max) @ Vds	4200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]
IXYS IXFH26N55Q	TO-247-3	92 nC	26 A	N-Channel	TO-247AD (IXFH)	230 mOhm	375 W	Through Hole	10 V	4.5 V	30 V	550 V	MOSFET (Metal Oxide)	-55 °C	150 °C
IXYS IXFH26N50Q	TO-247-3	95 nC	26 A	N-Channel	TO-247AD (IXFH)	200 mOhm	300 W	Through Hole	10 V	4.5 V	20 V	500 V	MOSFET (Metal Oxide)	-55 °C	150 °C	3900 pF
IXYS IXFH26N50	TO-247-3		26 A	N-Channel	TO-247AD (IXFH)	200 mOhm	300 W	Through Hole	10 V		20 V	500 V	MOSFET (Metal Oxide)	-55 °C	150 °C	4200 pF	160 nC	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 7.66

General part information

N-Channel 500 V 26A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

Technical documentation and resources