MOSFET N-CH 550V 26A TO247AD
| Part | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | FET Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Vgs (Max) | Drain to Source Voltage (Vdss) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | TO-247-3 | 92 nC | 26 A | N-Channel | TO-247AD (IXFH) | 230 mOhm | 375 W | Through Hole | 10 V | 4.5 V | 30 V | 550 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | |||
IXYS | TO-247-3 | 95 nC | 26 A | N-Channel | TO-247AD (IXFH) | 200 mOhm | 300 W | Through Hole | 10 V | 4.5 V | 20 V | 500 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 3900 pF | ||
IXYS | TO-247-3 | 26 A | N-Channel | TO-247AD (IXFH) | 200 mOhm | 300 W | Through Hole | 10 V | 20 V | 500 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 4200 pF | 160 nC | 4 V |