SSM3J66MFV,L3F

Active

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 800MA VESM

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 800MA VESM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J66MFV,L3F

Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.6 nC
Input Capacitance (Ciss) (Max) @ Vds	100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-723
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	390 mOhm
Supplier Device Package	VESM
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs(th) (Max) @ Id	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM3J66MFV,L3F	1 V	150 °C	100 pF	390 mOhm	VESM	150 mW	MOSFET (Metal Oxide)	P-Channel	1.6 nC	Surface Mount	6 V	-8 V	1.2 V 4.5 V	SOT-723	800 mA	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 800mA (Ta) 150mW (Ta) Surface Mount VESM

Technical documentation and resources