SSM3J66 Series

Catalog

MOSFET P-CH 20V 800MA VESM

Part	Vgs(th) (Max) @ Id	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM3J66MFV,L3F	1 V	150 °C	100 pF	390 mOhm	VESM	150 mW	MOSFET (Metal Oxide)	P-Channel	1.6 nC	Surface Mount	6 V	-8 V	1.2 V 4.5 V	SOT-723	800 mA	20 V