IPI60R125CPXKSA1

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Infineon Technologies

MOSFET N-CH 650V 25A TO262-3

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Infineon Technologies

MOSFET N-CH 650V 25A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI60R125CPXKSA1

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPI60R125CPXKSA1	PG-TO262-3	Through Hole	125 mOhm	MOSFET (Metal Oxide)	650 V	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	208 W	70 nC	-55 °C	150 °C	10 V	20 V	25 A	3.5 V	2500 pF

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General part information

N-Channel 650 V 25A (Tc) 208W (Tc) Through Hole PG-TO262-3

Technical documentation and resources