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MOSFET N-CH 650V 25A TO262-3
| Part | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | Technology | Drain to Source Voltage (Vdss) | FET Type | Package / Case | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TO262-3 | Through Hole | 125 mOhm | MOSFET (Metal Oxide) | 650 V | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA | 208 W | 70 nC | -55 °C | 150 °C | 10 V | 20 V | 25 A | 3.5 V | 2500 pF |