IXFY4N60P3

Obsolete

IXYS

MOSFET N-CH 600V 4A TO252

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Obsolete

IXYS

MOSFET N-CH 600V 4A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	IXFY4N60P3

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	365 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	114 W
Rds On (Max) @ Id, Vgs [Max]	2.2 Ohm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
IXYS IXFY4N85X	5.5 V	150 W	10 V	7 nC	-55 °C	150 °C	TO-252AA	MOSFET (Metal Oxide)	850 V	247 pF	2.5 Ohm	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	3.5 A	N-Channel	Surface Mount
IXYS IXFY4N60P3	5 V		10 V	6.9 nC	-55 °C	150 °C	TO-252AA	MOSFET (Metal Oxide)	600 V			DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	4 A	N-Channel	Surface Mount	114 W	2.2 Ohm	365 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 4A (Tc) 114W (Tc) Surface Mount TO-252AA

Technical documentation and resources

No documents available