MOSFET N-CH 850V 3.5A TO252
| Part | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Package / Case | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Mounting Type | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 5.5 V | 150 W | 10 V | 7 nC | -55 °C | 150 °C | TO-252AA | MOSFET (Metal Oxide) | 850 V | 247 pF | 2.5 Ohm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 30 V | 3.5 A | N-Channel | Surface Mount | |||
IXYS | 5 V | 10 V | 6.9 nC | -55 °C | 150 °C | TO-252AA | MOSFET (Metal Oxide) | 600 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 30 V | 4 A | N-Channel | Surface Mount | 114 W | 2.2 Ohm | 365 pF |