BSZ0909NDXTMA1

Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 20A WISON-8

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Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 20A WISON-8

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ0909NDXTMA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs	2.6 nC
Input Capacitance (Ciss) (Max) @ Vds	360 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	17 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	PG-WISON-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Power - Max [Max]	FET Feature	Configuration	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Infineon Technologies BSZ0909LSATMA1	1700 pF	N-Channel	8-PowerTDFN	-55 °C	150 °C	3 mOhm	30 V	20 V	Surface Mount	26 nC	4.5 V 10 V	MOSFET (Metal Oxide)	19 A 40 A	2 V	PG-TDSON-8 FL
Infineon Technologies BSZ0909NDXTMA1	360 pF		8-PowerVDFN	-55 °C	150 °C		30 V		Surface Mount			MOSFET (Metal Oxide)	20 A	2 V	PG-WISON-8	17 W	4.5V Drive Logic Level Gate	2 N-Channel (Dual)	2.6 nC	18 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 20A (Tc) 17W Surface Mount PG-WISON-8

Technical documentation and resources