BSZ0909 Series

Catalog

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 3 MOHM;

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Power - Max [Max]	FET Feature	Configuration	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Infineon Technologies BSZ0909LSATMA1	1700 pF	N-Channel	8-PowerTDFN	-55 °C	150 °C	3 mOhm	30 V	20 V	Surface Mount	26 nC	4.5 V 10 V	MOSFET (Metal Oxide)	19 A 40 A	2 V	PG-TDSON-8 FL
Infineon Technologies BSZ0909NDXTMA1	360 pF		8-PowerVDFN	-55 °C	150 °C		30 V		Surface Mount			MOSFET (Metal Oxide)	20 A	2 V	PG-WISON-8	17 W	4.5V Drive Logic Level Gate	2 N-Channel (Dual)	2.6 nC	18 mOhm