RFN1L7STE25

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Rohm Semiconductor

DIODE GEN PURP 700V 800MA PMDS

RFN1L7STE25

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Rohm Semiconductor

DIODE GEN PURP 700V 800MA PMDS

Description Specifications Series Pricing CAD Documents

Description

General part information

RFN1L7 Series

ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.

Technical Specifications

Parameters and characteristics for this part

Specification	RFN1L7STE25

Current - Average Rectified (Io)	800 mA
Current - Reverse Leakage	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	150 °C
Package / Case	SMA, DO-214AC
Package Name	PMDS
Reverse Recovery Time (trr)	80 ns
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	700 V
Voltage - Forward (Vf) (Max)	1.5 V

RFN1L7 Series

Fast Recovery Diode (AEC-Q101 Qualified)

Part	Current - Reverse Leakage	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Grade	Qualification	Voltage - Forward (Vf) (Max)	Current - Average Rectified (Io)	Package / Case	Reverse Recovery Time (trr)	Package Name	Operating Temperature - Junction	Technology	Mounting Type	Voltage - DC Reverse (Vr) (Max)	Operating Temperature - Junction (Max)
Rohm Semiconductor RFN1L7SDDTE25	1 µA	500 ns	200 mA	Automotive	AEC-Q101	1.5 V	800 mA	DO-214AC SMA	80 ns	PMDS	150 °C	Standard	Surface Mount	700 V
Rohm Semiconductor RFN1L7STE25	1 µA	500 ns	200 mA			1.5 V	800 mA	DO-214AC SMA	80 ns	PMDS		Standard	Surface Mount	700 V	150 °C

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

RFN1L7STE25 | Datasheet