Specification	IGD616IC1

Channel Type	Single
Driven Configuration	Low-Side, High-Side
Fall Time (Typ)	80 ns
Gate Channel	N-Channel, P-Channel
Gate Type	IGBT, N-Channel, P-Channel MOSFET, MOSFET
Input Type	Inverting
Mounting Type	Through Hole
Number of Drivers	1
Operating Temperature (Max)	85 °C
Operating Temperature (Min)	-40 °C
Package Leads	24 Leads
Package Name	Module, 36-DIP Module
Rise Time (Typ)	100 ns
Voltage - Supply (Maximum)	16 V
Voltage - Supply (Minimum)	14 V

IGD616 Series

Part	Gate Type	Number of Drivers	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Channel Type	Package Name	Package Leads	Driven Configuration	Fall Time (Typ)	Rise Time (Typ)	Input Type	Gate Channel	Mounting Type	Operating Temperature (Max)	Operating Temperature (Min)	Current - Peak Output (Source)	Current - Peak Output (Sink)	Logic Voltage - VIL	Logic Voltage - VIH
POWER INTEGRATIONS IGD616IT1	IGBT MOSFET N-Channel P-Channel MOSFET	1	16 V	14 V	Single	36-DIP Module Module	24 Leads	High-Side Low-Side	80 ns	100 ns	Inverting	N-Channel P-Channel	Through Hole	85 °C	-40 °C
POWER INTEGRATIONS IGD616IC1	IGBT MOSFET N-Channel P-Channel MOSFET	1	16 V	14 V	Single	36-DIP Module Module	24 Leads	High-Side Low-Side	80 ns	100 ns	Inverting	N-Channel P-Channel	Through Hole	85 °C	-40 °C
POWER INTEGRATIONS IGD616NT1	IGBT MOSFET N-Channel P-Channel MOSFET	1	16 V	14 V	Single	36-DIP Module Module	24 Leads	High-Side Low-Side	80 ns	100 ns	Non-Inverting	N-Channel P-Channel	Through Hole	85 °C	-40 °C
POWER INTEGRATIONS IGD616	IGBT MOSFET N-Channel P-Channel MOSFET	1	16 V	14 V	Single	36-DIP Module Module	24 Leads	High-Side Low-Side	80 ns	100 ns		N-Channel P-Channel	Through Hole	85 °C	-40 °C	16 A	16 A	0.9 V	3.8 V

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