IGD616 Series
Manufacturer: POWER INTEGRATIONS
IC GATE DRVR HI/LOW SIDE MODULE
| Part | Gate Type | Number of Drivers | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Channel Type | Package Name | Package Leads | Driven Configuration | Fall Time (Typ) | Rise Time (Typ) | Input Type | Gate Channel | Mounting Type | Operating Temperature (Max) | Operating Temperature (Min) | Current - Peak Output (Source) | Current - Peak Output (Sink) | Logic Voltage - VIL | Logic Voltage - VIH |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
POWER INTEGRATIONS | IGBT MOSFET N-Channel P-Channel MOSFET | 1 | 16 V | 14 V | Single | 36-DIP Module Module | 24 Leads | High-Side Low-Side | 80 ns | 100 ns | Inverting | N-Channel P-Channel | Through Hole | 85 °C | -40 °C | ||||
POWER INTEGRATIONS | IGBT MOSFET N-Channel P-Channel MOSFET | 1 | 16 V | 14 V | Single | 36-DIP Module Module | 24 Leads | High-Side Low-Side | 80 ns | 100 ns | Inverting | N-Channel P-Channel | Through Hole | 85 °C | -40 °C | ||||
POWER INTEGRATIONS | IGBT MOSFET N-Channel P-Channel MOSFET | 1 | 16 V | 14 V | Single | 36-DIP Module Module | 24 Leads | High-Side Low-Side | 80 ns | 100 ns | Non-Inverting | N-Channel P-Channel | Through Hole | 85 °C | -40 °C | ||||
POWER INTEGRATIONS | IGBT MOSFET N-Channel P-Channel MOSFET | 1 | 16 V | 14 V | Single | 36-DIP Module Module | 24 Leads | High-Side Low-Side | 80 ns | 100 ns | N-Channel P-Channel | Through Hole | 85 °C | -40 °C | 16 A | 16 A | 0.9 V | 3.8 V |