IXTT110N10L2

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IXYS

MOSFET N-CH 100V 110A TO268

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IXYS

MOSFET N-CH 100V 110A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXTT110N10L2

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC
Input Capacitance (Ciss) (Max) @ Vds	10500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max)	600 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs
IXYS IXTT110N10L2	TO-268AA	100 V	MOSFET (Metal Oxide)	600 W	110 A	18 mOhm	4.5 V	-55 °C	150 °C	Surface Mount	20 V	N-Channel	10 V	10500 pF	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	260 nC

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General part information

N-Channel 100 V 110A (Tc) 600W (Tc) Surface Mount TO-268AA

Technical documentation and resources

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