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MOSFET N-CH 100V 110A TO268
| Part | Supplier Device Package | Drain to Source Voltage (Vdss) | Technology | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Vgs (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | TO-268AA | 100 V | MOSFET (Metal Oxide) | 600 W | 110 A | 18 mOhm | 4.5 V | -55 °C | 150 °C | Surface Mount | 20 V | N-Channel | 10 V | 10500 pF | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 260 nC |