TK13E25D,S1X(S

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Toshiba Semiconductor and Storage

MOSFET N-CH 250V 13A TO220-3

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Toshiba Semiconductor and Storage

MOSFET N-CH 250V 13A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	TK13E25D,S1X(S

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	102 W
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Mounting Type	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs (Max)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage TK13E25D,S1X(S	Through Hole	N-Channel	TO-220-3	3.5 V	150 °C	250 V	TO-220-3	10 V	250 mOhm	25 nC	MOSFET (Metal Oxide)	20 V	102 W	13 A

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General part information

N-Channel 250 V 13A (Ta) 102W (Tc) Through Hole TO-220-3

Technical documentation and resources