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MOSFET N-CH 250V 13A TO220-3
| Part | Mounting Type | FET Type | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature | Drain to Source Voltage (Vdss) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs (Max) | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Through Hole | N-Channel | TO-220-3 | 3.5 V | 150 °C | 250 V | TO-220-3 | 10 V | 250 mOhm | 25 nC | MOSFET (Metal Oxide) | 20 V | 102 W | 13 A |