TSM090N03CP ROG

Active

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 30V 50A TO252

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 30V 50A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	TSM090N03CP ROG

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	750 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Taiwan Semiconductor Corporation TSM090N03ECP ROG	20 V	9 mOhm	150 °C	7.7 nC	MOSFET (Metal Oxide)	30 V	2.5 V	40 W	4.5 V 10 V	N-Channel	50 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252 (DPAK)	680 pF	Surface Mount
Taiwan Semiconductor Corporation TSM090N03CP ROG	20 V	9 mOhm	150 °C	45 nC	MOSFET (Metal Oxide)	30 V	2.5 V	40 W	4.5 V 10 V	N-Channel	50 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252 (DPAK)	750 pF	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 50A (Tc) 40W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources