MOSFET N-CHANNEL 30V 50A TO252
| Part | Vgs (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 20 V | 9 mOhm | 150 °C | 7.7 nC | MOSFET (Metal Oxide) | 30 V | 2.5 V | 40 W | 4.5 V 10 V | N-Channel | 50 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252 (DPAK) | 680 pF | Surface Mount |
Taiwan Semiconductor Corporation | 20 V | 9 mOhm | 150 °C | 45 nC | MOSFET (Metal Oxide) | 30 V | 2.5 V | 40 W | 4.5 V 10 V | N-Channel | 50 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252 (DPAK) | 750 pF | Surface Mount |