SSM3J306T(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 2.4A TSM

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Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 2.4A TSM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J306T(TE85L,F)

Current - Continuous Drain (Id) @ 25°C	2.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	2.5 nC
Input Capacitance (Ciss) (Max) @ Vds	280 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	117 mOhm
Supplier Device Package	TSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Supplier Device Package	Operating Temperature	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Technology
Toshiba Semiconductor and Storage SSM3J306T(TE85L,F)	SC-59 SOT-23-3 TO-236-3	2.4 A	Surface Mount	117 mOhm	2.5 nC	280 pF	P-Channel	700 mW	TSM	150 °C	20 V	4 V	10 V	30 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 2.4A (Ta) 700mW (Ta) Surface Mount TSM

Technical documentation and resources