MOSFET P-CH 30V 2.4A TSM
| Part | Package / Case | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Power Dissipation (Max) | Supplier Device Package | Operating Temperature | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drain to Source Voltage (Vdss) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | SC-59 SOT-23-3 TO-236-3 | 2.4 A | Surface Mount | 117 mOhm | 2.5 nC | 280 pF | P-Channel | 700 mW | TSM | 150 °C | 20 V | 4 V | 10 V | 30 V | MOSFET (Metal Oxide) |