SPI12N50C3XKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 560V 11.6A TO262-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 560V 11.6A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPI12N50C3XKSA1

Current - Continuous Drain (Id) @ 25°C	11.6 A
Drain to Source Voltage (Vdss)	560 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	380 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies SPI12N50C3XKSA1	N-Channel	20 V	10 V 49 nC	1200 pF	I2PAK TO-262-3 Long Leads TO-262AA	10 V	560 V	11.6 A	Through Hole	380 mOhm	3.9 V	MOSFET (Metal Oxide)	125 W	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 560 V 11.6A (Tc) 125W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources