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MOSFET N-CH 560V 11.6A TO262-3
| Part | FET Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Technology | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | 20 V | 10 V 49 nC | 1200 pF | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | 560 V | 11.6 A | Through Hole | 380 mOhm | 3.9 V | MOSFET (Metal Oxide) | 125 W | -55 °C | 150 °C |