SSM6J512NU,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 12V 10A 6UDFNB

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Toshiba Semiconductor and Storage

MOSFET P-CH 12V 10A 6UDFNB

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J512NU,LF

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	16.2 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature
Toshiba Semiconductor and Storage SSM6J512NU,LF	10 V	6-UDFNB (2x2)	1 V	12 V	Surface Mount	1400 pF	1.8 V 8 V	10 A	16.2 mOhm	MOSFET (Metal Oxide)	1.25 W	19.5 nC	P-Channel	150 °C

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General part information

P-Channel 12 V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)

Technical documentation and resources