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MOSFET P-CH 12V 10A 6UDFNB
| Part | Vgs (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Technology | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 10 V | 6-UDFNB (2x2) | 1 V | 12 V | Surface Mount | 1400 pF | 1.8 V 8 V | 10 A | 16.2 mOhm | MOSFET (Metal Oxide) | 1.25 W | 19.5 nC | P-Channel | 150 °C |