TC8020K6-G-M937
ActiveSIX PAIR, N/P CHANNEL ENHANCEMENT-MODE MOSFET
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TC8020K6-G-M937
ActiveSIX PAIR, N/P CHANNEL ENHANCEMENT-MODE MOSFET
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TC8020K6-G-M937 | TC8020 Series |
|---|---|---|
| - | - | |
| Configuration [custom] | 6 | 6 |
| Configuration [custom] | 6 | 6 |
| Drain to Source Voltage (Vdss) | 200 V | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF | 50 pF |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | 56-VFQFN Exposed Pad | 56-VFQFN Exposed Pad |
| Rds On (Max) @ Id, Vgs | 8 Ohm | 8 Ohm |
| Supplier Device Package | 56-QFN (8x8) | 56-QFN (8x8) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.4 V | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 8.40 | |
| Microchip Direct | T/R | 1 | $ 11.09 | |
| 25 | $ 9.24 | |||
| 100 | $ 8.40 | |||
| 1000 | $ 8.11 | |||
| 5000 | $ 8.03 | |||
TC8020 Series
Six Pair, N/P Channel Enhancement-Mode MOSFET
| Part | Drain to Source Voltage (Vdss) | Package / Case | Technology | Vgs(th) (Max) @ Id | Configuration [custom] | Configuration [custom] | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Supplier Device Package | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TC8020K6-G | 200 V | 56-VFQFN Exposed Pad | MOSFET (Metal Oxide) | 2.4 V | 6 | 6 | 50 pF | 8 Ohm | 56-QFN (8x8) | Surface Mount | -55 °C | 150 °C |
Microchip Technology TC8020K6-G | ||||||||||||
Microchip Technology TC8020K6-G-M937 | 200 V | 56-VFQFN Exposed Pad | MOSFET (Metal Oxide) | 2.4 V | 6 | 6 | 50 pF | 8 Ohm | 56-QFN (8x8) | Surface Mount | -55 °C | 150 °C |
Description
General part information
TC8020 Series
TC8020 consists of six pairs of high voltage, low threshold N- and P-channel MOSFETs in a 56-lead QFN package. All MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high voltage pulser applications. The complementary, high-speed, high voltage, gate-clamped N- and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input and output capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources