CSD17311Q5

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Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.3 MOHM

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Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.3 MOHM

Technical Specifications

Parameters and characteristics for this part

Specification	CSD17311Q5

Current - Continuous Drain (Id) @ 25°C	100 A, 32 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	3 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4280 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	3.2 W
Rds On (Max) @ Id, Vgs	2 mOhm
Supplier Device Package	8-VSON-CLIP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V, -8 V
Vgs(th) (Max) @ Id	1.6 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
Texas Instruments CSD17311Q5	31 nC	Surface Mount	8-PowerTDFN	1.6 V	-8 V, 10 V	8-VSON-CLIP (5x6)	2 mOhm	3.2 W	N-Channel	MOSFET (Metal Oxide)	3 V, 8 V	150 °C	-55 °C	30 V	4280 pF	32 A, 100 A

General part information

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

Technical documentation and resources