IPAN80R450P7XKSA1

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Infineon Technologies

MOSFET N-CH 800V 11A TO220-3-31

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LTB

Infineon Technologies

MOSFET N-CH 800V 11A TO220-3-31

Technical Specifications

Parameters and characteristics for this part

Specification	IPAN80R450P7XKSA1

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	770 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	29 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	PG-TO220-3-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Supplier Device Package	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)
Infineon Technologies IPAN80R450P7XKSA1	PG-TO220-3-FP	29 W	MOSFET (Metal Oxide)	3.5 V	770 pF	20 V	TO-220-3 Full Pack	10 V	24 nC	450 mOhm	Through Hole	11 A	-55 °C	150 °C	N-Channel	800 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 11A (Tc) 29W (Tc) Through Hole PG-TO220-3-FP

Technical documentation and resources