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MOSFET N-CH 800V 11A TO220-3-31
| Part | Supplier Device Package | Power Dissipation (Max) | Technology | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TO220-3-FP | 29 W | MOSFET (Metal Oxide) | 3.5 V | 770 pF | 20 V | TO-220-3 Full Pack | 10 V | 24 nC | 450 mOhm | Through Hole | 11 A | -55 °C | 150 °C | N-Channel | 800 V |