SPB35N10

Obsolete

Infineon Technologies

MOSFET N-CH 100V 35A TO263-3

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 35A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPB35N10

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	1570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	44 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	FET Type
Infineon Technologies SPB35N10	65 nC	35 A	10 V	1570 pF	20 V	150 W	MOSFET (Metal Oxide)	44 mOhm	-55 °C	175 ░C	100 V	PG-TO263-3-2	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 35A (Tc) 150W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources