Beta
⌘K
MOSFET N-CH 100V 35A TO263-3
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Power Dissipation (Max) | Technology | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package | Mounting Type | Package / Case | Vgs(th) (Max) @ Id | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 65 nC | 35 A | 10 V | 1570 pF | 20 V | 150 W | MOSFET (Metal Oxide) | 44 mOhm | -55 °C | 175 ░C | 100 V | PG-TO263-3-2 | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4 V | N-Channel |