SPP100N03S203

Obsolete

Infineon Technologies

MOSFET N-CH 30V 100A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 30V 100A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP100N03S203

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	7020 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	3.3 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)
Infineon Technologies SPP100N08S2-07	-55 °C	175 ░C	4 V	6020 pF	300 W	MOSFET (Metal Oxide)	7.1 mOhm	TO-220-3	100 A	N-Channel	200 nC	PG-TO220-3-1	4.5 V 10 V	Through Hole	75 V	20 V
Infineon Technologies SPP100N03S203	-55 °C	175 ░C	4 V	7020 pF	300 W	MOSFET (Metal Oxide)	3.3 mOhm	TO-220-3	100 A	N-Channel	150 nC	PG-TO220-3-1	10 V	Through Hole	30 V	20 V
Infineon Technologies SPP100N03S2-03	-55 °C	175 ░C	4 V	7020 pF	300 W	MOSFET (Metal Oxide)	3.3 mOhm	TO-220-3	100 A	N-Channel	150 nC	PG-TO220-3-1	10 V	Through Hole	30 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources

No documents available