MOSFET N-CH 75V 100A TO220-3
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Technology | Rds On (Max) @ Id, Vgs | Package / Case | Current - Continuous Drain (Id) @ 25°C | FET Type | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Drain to Source Voltage (Vdss) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 175 ░C | 4 V | 6020 pF | 300 W | MOSFET (Metal Oxide) | 7.1 mOhm | TO-220-3 | 100 A | N-Channel | 200 nC | PG-TO220-3-1 | 4.5 V 10 V | Through Hole | 75 V | 20 V |
Infineon Technologies | -55 °C | 175 ░C | 4 V | 7020 pF | 300 W | MOSFET (Metal Oxide) | 3.3 mOhm | TO-220-3 | 100 A | N-Channel | 150 nC | PG-TO220-3-1 | 10 V | Through Hole | 30 V | 20 V |
Infineon Technologies | -55 °C | 175 ░C | 4 V | 7020 pF | 300 W | MOSFET (Metal Oxide) | 3.3 mOhm | TO-220-3 | 100 A | N-Channel | 150 nC | PG-TO220-3-1 | 10 V | Through Hole | 30 V | 20 V |