IR2118SPBF

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Infineon Technologies

IC GATE DRVR HIGH-SIDE 8SOIC

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IR2118SPBF

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Infineon Technologies

IC GATE DRVR HIGH-SIDE 8SOIC

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2118SPBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH [Max]	9.5 V
Logic Voltage - VIL, VIH [Min]	6 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2118 Series

Part	Mounting Type	Number of Drivers	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration	Package / Case	Package / Case	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply [Max]	Voltage - Supply [Min]	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Gate Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Supplier Device Package	Input Type	Package / Case [y]	Package / Case [x]
Infineon Technologies IR2118PBF	Through Hole	1	600 V	High-Side	0.3 in	8-DIP	7.62 mm	150 °C	-40 °C	20 V	10 VDC	Single	80 ns	40 ns	9.5 V	6 V	IGBT N-Channel MOSFET	500 mA	250 mA	8-PDIP	Inverting
Infineon Technologies IR2118	Through Hole	1	600 V	High-Side	0.3 in	8-DIP	7.62 mm	150 °C	-40 °C	20 V	10 VDC	Single	80 ns	40 ns	9.5 V	6 V	IGBT N-Channel MOSFET	500 mA	250 mA	8-PDIP	Inverting
Infineon Technologies IR2118STRPBF	Surface Mount	1	600 V	High-Side		8-SOIC		150 °C	-40 °C	20 V	10 VDC	Single	80 ns	40 ns	9.5 V	6 V	IGBT N-Channel MOSFET	500 mA	250 mA	8-SOIC	Inverting	3.9 mm	0.154 in
Infineon Technologies 98-0231	Surface Mount	1	600 V	High-Side		8-SOIC		150 °C	-40 °C	20 V	10 VDC	Single	80 ns	40 ns	9.5 V	6 V	IGBT N-Channel MOSFET	500 mA	250 mA	8-SOIC	Inverting	3.9 mm	0.154 in
Infineon Technologies IR2118STR	Surface Mount	1	600 V	High-Side		8-SOIC		150 °C	-40 °C	20 V	10 VDC	Single	80 ns	40 ns	9.5 V	6 V	IGBT N-Channel MOSFET	500 mA	250 mA	8-SOIC	Inverting	3.9 mm	0.154 in
Infineon Technologies IR2118SPBF	Surface Mount	1	600 V	High-Side		8-SOIC		150 °C	-40 °C	20 V	10 VDC	Single	80 ns	40 ns	9.5 V	6 V	IGBT N-Channel MOSFET	500 mA	250 mA	8-SOIC	Inverting	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.17
		10	$ 1.95
		95	$ 1.57
		285	$ 1.47
		570	$ 1.29
		1045	$ 1.07
		2565	$ 0.99
		5035	$ 0.96

Description

General part information

IR2118 Series

High-Side Gate Driver IC Inverting 8-SOIC

Documents

Technical documentation and resources