IR2118 Series

Catalog

EICEDRIVER™ 600 V HIGH-SIDE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP8 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: SINGLE INPUT

Part	Mounting Type	Number of Drivers	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration	Package / Case	Package / Case	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply [Max]	Voltage - Supply [Min]	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Gate Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Supplier Device Package	Input Type	Package / Case [y]	Package / Case [x]
Infineon Technologies IR2118PBF	Through Hole	1	600 V	High-Side	0.3 in	8-DIP	7.62 mm	150 °C	-40 °C	20 V	10 VDC	Single	80 ns	40 ns	9.5 V	6 V	IGBT N-Channel MOSFET	500 mA	250 mA	8-PDIP	Inverting
Infineon Technologies IR2118	Through Hole	1	600 V	High-Side	0.3 in	8-DIP	7.62 mm	150 °C	-40 °C	20 V	10 VDC	Single	80 ns	40 ns	9.5 V	6 V	IGBT N-Channel MOSFET	500 mA	250 mA	8-PDIP	Inverting
Infineon Technologies IR2118STRPBF	Surface Mount	1	600 V	High-Side		8-SOIC		150 °C	-40 °C	20 V	10 VDC	Single	80 ns	40 ns	9.5 V	6 V	IGBT N-Channel MOSFET	500 mA	250 mA	8-SOIC	Inverting	3.9 mm	0.154 in
Infineon Technologies 98-0231	Surface Mount	1	600 V	High-Side		8-SOIC		150 °C	-40 °C	20 V	10 VDC	Single	80 ns	40 ns	9.5 V	6 V	IGBT N-Channel MOSFET	500 mA	250 mA	8-SOIC	Inverting	3.9 mm	0.154 in
Infineon Technologies IR2118STR	Surface Mount	1	600 V	High-Side		8-SOIC		150 °C	-40 °C	20 V	10 VDC	Single	80 ns	40 ns	9.5 V	6 V	IGBT N-Channel MOSFET	500 mA	250 mA	8-SOIC	Inverting	3.9 mm	0.154 in
Infineon Technologies IR2118SPBF	Surface Mount	1	600 V	High-Side		8-SOIC		150 °C	-40 °C	20 V	10 VDC	Single	80 ns	40 ns	9.5 V	6 V	IGBT N-Channel MOSFET	500 mA	250 mA	8-SOIC	Inverting	3.9 mm	0.154 in