RN4906,LXHF(CT

Active

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Technical Specifications

Parameters and characteristics for this part

Specification	RN4906,LXHF(CT

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz, 200 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	200 mW
Qualification	AEC-Q101
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	US6
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Transistor Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Grade	Qualification
Toshiba Semiconductor and Storage RN4906FE,LF(CT	SOT-563 SOT-666	80	4.7 kOhms	300 mV	Surface Mount	47000 Ohms	100 mA	ES6	1 NPN 1 PNP	100 mW	100 nA	200 MHz	50 V
Toshiba Semiconductor and Storage RN4906,LXHF(CT	6-TSSOP SC-88 SOT-363	80	4.7 kOhms	300 mV	Surface Mount	47000 Ohms	100 mA	US6	1 NPN 1 PNP	200 mW	500 nA	200 MHz 250 MHz	50 V	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz, 250MHz 200mW Surface Mount US6

Technical documentation and resources