TRANS NPN/PNP PREBIAS 0.1W ES6
| Part | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Base (R1) | Vce Saturation (Max) @ Ib, Ic | Mounting Type | Resistor - Emitter Base (R2) | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Transistor Type | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Frequency - Transition | Voltage - Collector Emitter Breakdown (Max) [Max] | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | SOT-563 SOT-666 | 80 | 4.7 kOhms | 300 mV | Surface Mount | 47000 Ohms | 100 mA | ES6 | 1 NPN 1 PNP | 100 mW | 100 nA | 200 MHz | 50 V | ||
Toshiba Semiconductor and Storage | 6-TSSOP SC-88 SOT-363 | 80 | 4.7 kOhms | 300 mV | Surface Mount | 47000 Ohms | 100 mA | US6 | 1 NPN 1 PNP | 200 mW | 500 nA | 200 MHz 250 MHz | 50 V | Automotive | AEC-Q101 |