TSM2312CX RFG

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 20V 4.9A SOT23

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Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 20V 4.9A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	TSM2312CX RFG

Current - Continuous Drain (Id) @ 25°C	4.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11.2 nC
Input Capacitance (Ciss) (Max) @ Vds	500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	750 mW
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
Taiwan Semiconductor Corporation TSM2312CX RFG	11.2 nC	4.9 A	SC-59 SOT-23-3 TO-236-3	Surface Mount	750 mW	MOSFET (Metal Oxide)	500 pF	20 V	N-Channel	8 V	SOT-23	-55 °C	150 °C	1.8 V 4.5 V	33 mOhm	1 V

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General part information

N-Channel 20 V 4.9A (Tc) 750mW (Ta) Surface Mount SOT-23

Technical documentation and resources

No documents available