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MOSFET N-CHANNEL 20V 4.9A SOT23
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Mounting Type | Power Dissipation (Max) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | FET Type | Vgs (Max) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 11.2 nC | 4.9 A | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 750 mW | MOSFET (Metal Oxide) | 500 pF | 20 V | N-Channel | 8 V | SOT-23 | -55 °C | 150 °C | 1.8 V 4.5 V | 33 mOhm | 1 V |