CDBJSC10650-G

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Comchip Technology

DIODE SIL CARB 650V 10A TO220F

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Comchip Technology

DIODE SIL CARB 650V 10A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	CDBJSC10650-G

Capacitance @ Vr, F	710 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220F
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

DIODE SIL CARB 650V 10A TO220F

Part	Package / Case	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Mounting Type	Capacitance @ Vr, F
Comchip Technology CDBJSC10650-G	TO-220-2 Full Pack	0 ns	10 A	1.7 V	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	No Recovery Time	650 V	TO-220F	100 µA	Through Hole	710 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 10A Through Hole TO-220F

Technical documentation and resources

No documents available