DIODE SIL CARB 650V 10A TO220F
| Part | Package / Case | Reverse Recovery Time (trr) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Current - Reverse Leakage @ Vr | Mounting Type | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Comchip Technology CDBJSC10650-G | TO-220-2 Full Pack | 0 ns | 10 A | 1.7 V | 175 ░C | -55 C | SiC (Silicon Carbide) Schottky | No Recovery Time | 650 V | TO-220F | 100 µA | Through Hole | 710 pF |