GE12047BCA3

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GE Aerospace

MOSFET 2N-CH 1200V 475A

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GE Aerospace

MOSFET 2N-CH 1200V 475A

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	GE12047BCA3	GE12047 Series

Configuration	2 N-Channel (Dual)	2 N-Channel (Dual), 2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	475 A	475 A
Drain to Source Voltage (Vdss)	1200 V	1200 V
Drain to Source Voltage (Vdss)	1.2 kV	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	1248 nC	1248 nC
Input Capacitance (Ciss) (Max) @ Vds	29300 pF	29300 pF
Mounting Type	Chassis Mount	Chassis Mount
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	Module	Module
Power - Max [Max]	1250 W	1250 W
Rds On (Max) @ Id, Vgs	4.4 mOhm	4.4 mOhm
Supplier Device Package	-	Module
Technology	Silicon Carbide (SiC)	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.5 V	4.5 V

MOSFET 2N-CH 1200V 475A

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Configuration	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package
GE Aerospace GE12047BCA3	475 A	150 °C	-55 °C	29300 pF	Silicon Carbide (SiC)	1200 V	1.2 kV	1250 W	1248 nC	2 N-Channel (Dual)	4.5 V	Module	Chassis Mount	4.4 mOhm
GE Aerospace GE12047CCA3	475 A	150 °C	-55 °C	29300 pF	Silicon Carbide (SiC)	1200 V	1.2 kV	1250 W	1248 nC	2 N-Channel (Half Bridge)	4.5 V	Module	Chassis Mount	4.4 mOhm	Module

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 1200V (1.2kV) 475A 1250W Chassis Mount

Technical documentation and resources